AM10N20-750B Datasheet, PDF (1/5 Pages) Analog Power – N-Channel 200-V (D-S) MOSFET

Analog Power
N-Channel 200-V (D-S) MOSFET
Key Features:
• Low r_DS(on) trench technology
• Low thermal impedance
• Fast switching speed
Typical Applications:
• LED Inverter Circuits
• Inrush Limiter and Hot Swap Circuits
• 48V-Input DC/DC Conversion Circuits
AM10N20-750B
PRODUCT SUMMARY
VDS (V)
r_DS(on) (mΩ)
200
750 @ V_GS = 10V
ID (A)
10^a
ABSOLUTE MAXIMUM RATINGS (T_A = 25°C UNLESS OTHERWISE NOTED)
Parameter
Symbol Limit
Drain-Source Voltage
V_DS
200
Gate-Source Voltage
Continuous Drain Current ^a
Pulsed Drain Current ^b
Continuous Source Current (Diode Conduction) ^a
Power Dissipation ^a
V_GS
±20
T_C=25°C
I_D
10
I_DM
40
I_S
10
T_C=25°C
P_D
300
Operating Junction and Storage Temperature Range
T_J, T_stg -55 to 175
Units
V
A
A
W
°C
Maximum Junction-to-Ambient ^C
Maximum Junction-to-Case
THERMAL RESISTANCE RATINGS
Parameter
Symbol
R_θJA
R_θJC
Maximum
62.5
0.5
Units
°C/W
Notes
a. Package Limited
b. Pulse width limited by maximum junction temperature
c. Surface Mounted on 1” x 1” FR4 Board.
© Preliminary
1
Publication Order Number:
DS_AM10N20-750B_1A