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AAT4285 Datasheet, PDF (8/11 Pages) Advanced Analogic Technologies – 12V Slew Rate Controlled Load Switch
AAT4285
12V Slew Rate Controlled Load Switch
Applications Information
Input Capacitor
A 1µF or larger capacitor is typically recommended
for CIN in most applications. A CIN capacitor is not
required for basic operation. However, CIN is useful
in preventing load transients from affecting
upstream circuits. CIN should be located as close to
the device VIN pin as practically possible.
Ceramic, tantalum, or aluminum electrolytic capac-
itors may be selected for CIN. There is no specific
capacitor ESR requirement for CIN. However, for
higher current operation, ceramic capacitors are
recommended for CIN due to their inherent capabil-
ity over tantalum capacitors to withstand input cur-
rent surges from low impedance sources, such as
batteries in portable devices.
Output Capacitor
For proper slew operation, a 0.1µF capacitor or
greater between OUT and GND is recommended.
The output capacitor has no specific capacitor type
or ESR requirement. If desired, COUT may be
increased without limit to accommodate any load
transient condition without adversely affecting the
device turn-on slew rate time.
Enable Function
The AAT4285 features an enable / disable function.
This pin (ON/OFF) is compatible with both TTL and
CMOS logic.
Reverse Output-to-Input Voltage
Conditions and Protection
Under normal operating conditions, a parasitic diode
exists between the output and input of the load
switch. The input voltage should always remain
greater than the output load voltage, maintaining a
reverse bias on the internal parasitic diode.
Conditions where VOUT might exceed VIN should be
avoided since this would forward bias the internal
parasitic diode and allow excessive current flow into
the OUT pin and possibly damage the load switch.
In applications where there is a possibility of VOUT
exceeding VIN for brief periods of time during nor-
mal operation, the use of a larger value CIN capac-
8
itor is highly recommended. A larger value of CIN
with respect to COUT will affect a slower CIN decay
rate during shutdown, thus preventing VOUT from
exceeding VIN. In applications where there is a
greater danger of VOUT exceeding VIN for extended
periods of time, it is recommended to place a
Schottky diode from IN to OUT (connecting the
cathode to IN and anode to OUT). The Schottky
diode forward voltage should be less than 0.45V.
Thermal Considerations and High
Output Current Applications
The AAT4285 is designed to deliver a continuous
output load current. The limiting characteristic for
maximum safe operating output load current is
package power dissipation. In order to obtain high
operating currents, careful device layout and circuit
operating conditions need to be taken into account.
The following discussions will assume the load
switch is mounted on a printed circuit board utilizing
the minimum recommended footprint, as stated in
the Layout Considerations section of this datasheet.
At any given ambient temperature (TA), the maxi-
mum package power dissipation can be deter-
mined by the following equation:
PD(MAX)
=
TJ(MAX) -
θJA
TA
Constants for the AAT4285 are maximum junction
temperature, TJ(MAX) = 125°C, and package thermal
resistance, θJA = 140°C/W. Worst case conditions
are calculated at the maximum operating tempera-
ture where TA = 85°C. Typical conditions are calcu-
lated under normal ambient conditions where TA =
25°C. At TA = 85°C, PD(MAX) = 286mW. At TA =
25°C, PD(MAX) = 714mW.
The maximum continuous output current for the
AAT4285 is a function of the package power dissipa-
tion and the RDS of the MOSFET at TJ(MAX). The max-
imum RDS of the MOSFET at TJ(MAX) is calculated by
increasing the maximum room temperature RDS by
the RDS temperature coefficient. The temperature
coefficient (TCRRDS) is 2800ppm/°C. Therefore,
MAX RDS125°C = RDS25°C · (1 + TCRRDS · ΔT)
MAX RDS125°C = 240mΩ · (1 + 0.0028 · (125°C - 25°C))
= 307mΩ
4285.2007.04.1.0