AAT8543 Datasheet, PDF (4/6 Pages) Advanced Analogic Technologies – 20V P-Channel Power MOSFET

Typical Characteristics
T_J = 25ºC, unless otherwise noted.
Gate Charge
5
V_D = 10V
4 ^{ID = 4.2A}
3
2
1
0
0
2
4
6
8
10
Q_G, Charge (nC)
AAT8543
20V P-Channel Power MOSFET
Source-Drain Diode Forward Voltage
100
10
1
T_J = 150°C
T_J = 25°C
0.1
0
0 .2
0.4
0 .6
0.8
1
1.2
V_SD (V)
Capacitance
1000
800
C_iss
600
400
C_oss
200
C_rss
0
0
5
10
15
20
V_DS (V)
Single Pulse Power, Junction to Ambient
50
45
40
35
30
25
20
15
10
5
0
0.001
0.01
0.1
1
10
100
1000
Time (s)
Transient Thermal Response, Junction to Ambient
10
1
.5
0.1
.2
.1
.05
.02
0.01
Single Pulse
0.001
0.0001
0.001
0.01
0.1
1
10
Time (s)
4
100
1000
8543.2005.04.1.0