AAT8303_05 Datasheet, PDF (4/6 Pages) Advanced Analogic Technologies – 20V P-Channel Power MOSFET

Typical Characteristics
T_J = 25ºC, unless otherwise noted.
Gate Charge
5
V_D=10V
4 ^ID=10A
3
2
1
0
0
5
10
15
20
25
30
35
40
Q_G, Charge (nC)
AAT8303
20V P-Channel Power MOSFET
Source-Drain Diode Forward Voltage
100
10
T_J = 150°C
1
T_J = 25°C
0.1
0
0 .2
0.4
0 .6
0.8
1
1.2
V_SD (V)
Capacitance
5000
4000
3000
C_iss
2000
C_oss
1000
0
C_rss
0
5
10
15
20
V_DS (V)
Single Pulse Power, Junction to Ambient
50
45
40
35
30
25
20
15
10
5
0
0.001
0.01
0.1
1
10
Time (s)
100
1000
Transient Thermal Response, Junction to Ambient
10
.5
1
.2
.1
.02
0.1 _.01
Single Pulse
0.01
0.0001
0.001
0.01
0.1
1
Time (s)
10
100
1000
4
8303.2005.04.1.0