AAT7551 Datasheet, PDF (4/6 Pages) Advanced Analogic Technologies – 20V P-Channel Power MOSFET

Typical Characteristics
T_J = 25ºC, unless otherwise noted.
Gate Charge
5
V_D = 10V
4 ^{ID = 2.7A}
3
2
1
0
0
1
2
3
4
5
6
Q_G, Charge (nC)
AAT7551
20V P-Channel Power MOSFET
Source-Drain Diode Forward Voltage
100
10
1
0.1
0
T_J = 150°C
T_J = 25°C
0 .2
0.4
0 .6
0.8
1
1.2
V_SD (V)
600
C_iss
400
Capacitance
200
C_rss
C_oss
0
0
5
10
15
20
V_DS (V)
Single Pulse Power, Junction to Ambient
50
45
40
35
30
25
20
15
10
5
0
0.0001 0.001 0.01
0.1
1
Time (s)
10
100 1000
Transient Thermal Response, Junction to Ambient
10
1
.5
.2
.1
0.1
.02
.01
Single Pulse
0.01
0.0001
0.001
0.01
0.1
1
Time (s)
10
100
1000
4
7551.2005.04.1.0