BQ29400 Datasheet, PDF (2/10 Pages) Texas Instruments – VOLTAGE PROTECTION FOR 2-, 3-, OR 4-CELL Lion BATTERIES

bq29400, bq29400A
bq29401, bq29405
SLUS568B – JULY 2003 – REVISED NOVEMBER 2004
www.ti.com
These devices have limited built-in ESD protection. The leads should be shorted together or the device
placed in conductive foam during storage or handling to prevent electrostatic damage to the MOS gates.
ABSOLUTE MAXIMUM RATINGS
over operating free-air temperature range unless otherwise noted⁽¹⁾⁽²⁾
Supply voltage range (VDD)
Input voltage range
(VC1, VC2, VC3, VC4)
(VC1 to VC2, VC2 to VC3, VC3 to VC4, VC4 to GND)
(OUT)
Output voltage range
(CD)
Continuous total power dissipation
Storage temperature range, T_stg
Lead temperature (soldering, 10 sec)
UNIT
-0.3 V to 28 V
-0.3 V to 28 V
-0.3 V to 8 V
-0.3 V to 28 V
-0.3 V to 28 V
See Dissipation Rating Table
-65°C to 150°C
300°C
(1) Stresses beyond those listed under "absolute maximum ratings" may cause permanent damage to the device. These are stress ratings
only, and functional operation of the device at these or any other conditions beyond those indicated under "recommended operating
conditions" is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
(2) All voltages are with respect to ground of this device except the differential voltage of VC1-VC2, VC2-VC3, VC3-VC4 and VC4-GND.
PACKAGE DISSIPATION RATINGS
PACKAGE
DCT
PW
T_A ≤ 25°C
POWER RATING
412 mW
525 mW
DERATING FACTOR
ABOVE T_A = 25°C
3.3 mW/°C
4.2 mW/°C
T_A = 70°C
POWER RATING
264 mW
336 mW
T_A = 85°C
POWER RATING
214 mW
273 mW
RECOMMENDED OPERATING CONDITIONS
V_DD
V_I
t_d(CD)
R_IN
C_IN
R_VD
C_VD
T_A
Supply Voltage
Input voltage range
VC1, VC2, VC3, VC4
VCn – VC(n+1), (n=1, 2, 3 ), VC4-GND
Delay time capacitance
Voltage-monitor filter resistance
Voltage-monitor filter capacitance
Supply-voltage filter resistance
Supply-voltage filter capacitance
Operating ambient temperature range
MIN
4.0
0
0
100
0.01
0
-25
NOM MAX UNIT
25 V
V_{DD V}
5.0
0.22
µF
1k
Ω
0.1
µF
100 Ω
0.1
µF
85 °C
2