AAT8107 Datasheet, PDF (2/6 Pages) Advanced Analogic Technologies – 20V P-Channel Power MOSFET

AAT8107
20V P-Channel Power MOSFET
Electrical Characteristics
T_J = 25°C, unless otherwise noted.
Symbol Description
Conditions
DC Characteristics
BV_DSS Drain-Source Breakdown
Voltage
V_GS = 0V, I_D = -250µA
R_DS(ON)
Drain-Source On-Resistance^{1 VGS = -4.5V, ID = -6.5A}
V_GS = -2.5V, I_D = -5.0A
I_D(ON) On-State Drain Current¹
V_GS = -4.5V, V_DS = 5V (Pulsed)
V_GS(th) Gate Threshold Voltage
V_GS = V_DS, I_D = -250µA
I_GSS Gate-Body Leakage Current V_GS = ±12V, V_DS = 0V
I_DSS
Drain Source Leakage
Current
V_GS = 0V, V_DS = -20V
V_GS = 0V, V_DS = -16V, T_J = 70°C
g_fs
Forward Transconductance¹ V_DS = -5V, I_D = -6.5A
Dynamic Characteristics²
Q_G Total Gate Charge
Q_GS Gate-Source Charge
Q_GD Gate-Drain Charge
t_D(ON) Turn-On Delay
t_R
Turn-On Rise Time
t_D(OFF) Turn-Off Delay
t_F
Turn-Off Fall Time
Source-Drain Diode Characteristics
V_DS = -15V, R_D = 2.3Ω, V_GS = -4.5V
V_DS = -15V, R_D = 2.3Ω, V_GS = -4.5V
V_DS = -15V, R_D = 2.3Ω, V_GS = -4.5V
V_DS = -15V, R_D = 2.3Ω, V_GS = -4.5V, R_G = 6Ω
V_DS = -15V, R_D = 2.3Ω, V_GS = -4.5V, R_G = 6Ω
V_DS = -15V, R_D = 2.3Ω, V_GS = -4.5V, R_G = 6Ω
V_DS = -15V, R_D = 2.3Ω, V_GS = -4.5V, R_G = 6Ω
V_SD Source-Drain Forward
Voltage¹
V_GS = 0, I_S = -6.5A
I_S
Continuous Diode Current³
Min
-20
-32
-0.6
Typ
27
46
12
13.6
2.3
5.5
10
35
38
50
Max
35
60
±100
-1
-5
-1.5
-1.7
Units
V
mΩ
A
V
nA
µA
S
nC
ns
V
A
1. Pulse test: Pulse Width = 300µs.
2. Guaranteed by design. Not subject to production testing.
3. Based on thermal dissipation from junction to ambient while mounted on a 1" x 1" PCB with optimized layout. A 10-second pulse on a
1" x 1" PCB approximates testing a device mounted on a large multi-layer PCB as in most applications. R_θJF + R_θFA = R_θJA where the
foot thermal reference is defined as the normal solder mounting surface of the device's leads. R_θJF is guaranteed by design; however,
R_θCA is determined by the PCB design. Actual maximum continuous current is limited by the application's design.
2
8107.2005.05.1.1