AAT7126 Datasheet, PDF (2/4 Pages) Advanced Analogic Technologies – 30V N-Channel Power MOSFET

AAT7126
30V N-Channel Power MOSFET
Electrical Characteristics (T_J=25°C unless otherwise noted)
Symbol Description
Conditions
DC Characteristics
BV_DSS Drain-Source Breakdown Voltage
R_DS(ON) Drain-Source ON-Resistance ²
I_D(ON)
V_GS(th)
I_GSS
On-State Drain Current ²
Gate Threshold Voltage
Gate-Body Leakage Current
I_DSS
Drain Source Leakage Current
g_fs
Forward Transconductance ²
Dynamic Characteristics ³
Q_G
Total Gate Charge
Q_GT
Total Gate Charge
Q_GS
Gate-Source Charge
Q_GD
Gate-Drain Charge
t_D(ON)
Turn-ON Delay
t_R
Turn-ON Rise Time
t_D(OFF) Turn-OFF Delay
t_F
Turn-OFF Fall Time
Source-Drain Diode Characteristics
V_SD
Source-Drain Forward Voltage ²
I_S
Continuous Diode Current
V_GS=0V, I_D=250µA
V_GS=10V, I_D=6.8A
V_GS=4.5V, I_D=5.4A
V_GS=10V ,V_DS=5V (Pulsed)
V_GS=V_DS, I_D=250µA
V_GS=±20V, V_DS=0V
V_GS=0V,V_DS=30V
V_GS=0V,V_DS=30V, T_J=70°C
V_DS=5V, I_D=6.8A
V_DS=15V, I_D=6.8A, V_GS=5V
V_DS=15V, I_D=6.8A, V_GS=10V
V_DS=15V, I_D=6.8A, V_GS=10V
V_DS=15V, I_D=6.8A, V_GS=10V
V_DD=15V, V_GS=10V, R_D=3Ω, R_G=6Ω
V_DD=15V, V_GS=10V, R_D=3Ω, R_G=6Ω
V_DD=15V, V_GS=10V, R_D=3Ω, R_G=6Ω
V_DD=15V, V_GS=10V, R_D=3Ω, R_G=6Ω
V_GS=0, I_S=1.7A
Note 1: Mounted on 1” x 1” FR4 Copper Board, 10 sec pulse width.
Note 2: Pulse test: pulse width = 300µs
Note 3: Guaranteed by design. Not subjected to production testing.
Min Typ Max Units
30
V
19.5 26
32 41
mΩ
24
A
1.0
V
±100 nA
1
5
µA
14
S
8.6 13
nC
16 24
nC
2.5
nC
2.8
nC
3
ns
3
ns
12
ns
6
ns
1.2
V
1.7
A
2
7126.2002.10.0.9