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AAT1155_06 Datasheet, PDF (13/17 Pages) Advanced Analogic Technologies – 1MHz 2.5A Step-Down DC/DC Converter
AAT1155
1MHz 2.5A Step-Down DC/DC Converter
Thermal
Losses associated with the AAT1155 output switch-
ing MOSFET are due to switching losses and con-
duction losses. The conduction losses are associ-
ated with the RDS(ON) characteristics of the output
switching device. At the full load condition, assum-
ing continuous conduction mode (CCM), an accu-
rate calculation of the RDS(ON) losses can be
derived from the following equations:
PON =
I2
RMS
· RDS(ON)
RDS(ON) losses
IRMS =
⎛
⎝
I
2
O
+
ΔI 2
12
⎞
⎠
·D
Internal switch RMS current
D is the duty cycle and VF is the forward voltage
drop of the Schottky diode.
D = VO + VF
VIN+ VF
ΔI is the peak-to-peak inductor ripple current.
A simplified form of calculating the RDS(ON) and
switching losses is given by:
P=
IO2 · RDS(ON) VO
VIN
+ tSW · FS · IO + IQ · VIN
where IQ is the AAT1155 quiescent current.
Once the total losses have been determined, the
junction temperature can be derived. The thermal
resistance (ΘJA) for the MSOP-8 package mounted
on an FR4 printed circuit board in still air is 150°C/W.
TJ = P θJA + TAMB
TAMB is the maximum ambient temperature and TJ
is the resultant maximum junction temperature.
1155.2006.09.1.7
Design Example
(see Figures 2 and 5 for reference)
IOUT
IRIPPLE
VOUT
VIN
FS
TMAX
2.5A
40% of Full Load at Max VIN
2.5V
5V ±5%
1MHz
70°C
Inductor Selection
L = VOUT · ⎛1- VOUT⎞
IO · k · FS ⎝ VIN ⎠
=
2.5A
3.3V
· 0.4 ·
1MHz
·
⎛
⎝
1-
3.3V ⎞
5.25V⎠
=
1.23μH
Use standard value of 1.5µH
Sumida inductor Series CDRH6D38.
ΔI = VO
L · FS
⎛⎝1-
VO ⎞
VIN ⎠
3.3V
= 1.5μH ·1MHz
⎛⎝1-
3.3V ⎞
5.25V⎠
=
0.82A
I PK
=
IOUT +
ΔI
2
= 2.5A + 0.41 = 2.91A
100
95
90
85
80
75
70
65
60
0.01
Efficiency vs. Load Current
(VIN = 5.0V; VOUT = 3.3V)
0.1
1
Output Current (A)
Figure 5: 5V Input, 3.3V Output.
10
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