SB170 Datasheet, PDF (1/2 Pages) Diodes Incorporated – 1.0A HIGH VOLTAGE SCHOTTKY BARRIER RECTIFIER

SB170 - SB1100
1.0A HIGH VOLTAGE SCHOTTKY BARRIER RECTIFIER
Features
· Schottky Barrier Chip
· Guard Ring Die Construction for
Transient Protection
· Ideally Suited for Automatic Assembly
· Low Power Loss, High Efficiency
· Surge Overload Rating to 25A Peak
· For Use in Low Voltage, High Frequency
Inverters, Free Wheeling, and Polarity
Protection Application
· High Temperature Soldering:
260°C/10 Second at Terminal
· Plastic Material: UL Flammability
Classification Rating 94V-0
Mechanical Data
· Case: Molded Plastic
· Terminals: Plated Leads -
Solderable per MIL-STD-202, Method 208
· Polarity: Cathode Band
· Weight: 0.3 grams (approx.)
· Mounting Position: Any
· Marking: Type Number
A
B
A
C
D
DO-41
Dim
Min
Max
A
25.4
¾
B
4.1
5.2
C
0.71
0.86
D
2.0
2.7
All Dimensions in mm
Maximum Ratings and Electrical Characteristics ^{@ TA = 25°C unless otherwise specified}
Single phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
Characteristic
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
RMS Reverse Voltage
Average Rectified Output Current
@ TT = 85°C
Non-Repetitive Peak Forward Surge Current 8.3ms
single half sine-wave superimposed on rated load
(JEDEC Method)
Forward Voltage @ IF = 1.0A
@ TA = 25°C
Peak Reverse Current
at Rated DC Blocking Voltage
Typical Junction Capacitance (Note 2)
@ TA = 25°C
@ TA = 100°C
Typical Thermal Resistance Junction to Lead
Typical Thermal Resistance Junction to Ambient (Note 1)
Operating and Storage Temperature Range
Symbol
V_RRM
VRWM
VR
VR(RMS)
IO
I_FSM
VFM
IRM
Cj
RqJL
RqJA
Tj, TSTG
SB170
70
49
SB180
SB190
80
90
56
63
1.0
25
0.80
0.5
10
80
15
50
-65 to +125
SB1100 Unit
100
V
70
V
A
A
V
mA
pF
K/W
K/W
°C
Notes: 1. Valid provided that leads are kept at ambient temperature at a distance of 9.5mm from the case.
2. Measured at 1.0MHz and applied reverse voltage of 4.0V DC.
DS30116 Rev. B-1
1 of 2
SB170 - SB1100