MMBT4416 Datasheet, PDF (1/3 Pages) Advanced Analogic Technologies – N-Channel RF Amplifiers

MMBT4416
N-Channel RF Amplifiers
• This device is designed for RF amplifiers.
G
• Sourced from process 50.
S
SOT-23
D _{Mark: 6A}
Absolute Maximum Ratings T_A=25°C unless otherwise noted
Symbol
Parameter
V_DG
Drain-Gate Voltage
V_GS
Gate-Source Voltage
I_G
Gate Current
P_D
Total Device Dissipation @T_A=25°C
Derate above 25°C
R_θJA
T_J, T_STG
Thermal Resistance Junction to Ambient
Junction and Storage Temperature Range
Value
30
30
10
225
1.8
556
- 55 ~ 150
Units
V
V
mA
mW
mW/°C
°C/W
°C
Electrical Characteristics T_A=25°C unless otherwise noted
Symbol
Parameter
Test Condition
Min. Typ. Max. Units
Off Characteristics
V_(BR)GSS Gate-Source Breakdown Voltage
I_GSS
Gate Reverse Current
V_GS(off)
V_GS
Gate Source Cut-off Voltage
Gate Source Voltage
On Characteristics
I_DSS
V_GS(f)
Zero-Gate Voltage Drain Current
Gate-Source Forward Voltage
Small Signal Characteristics
lY_fsl
ly_osl
C_iss
Crss
C_oss
Forward Transfer Admittance
Output Admittance
Input Capacitance
Reverse Transfer Capacitance
Output Capacitance
Functional Characteristics
V_DS = 0, I_G = 1µA
30
V_GS = 20V, V_DS = 0
V_GS = 20V, V_DS = 0, T_A = 150°C
V_DS = 15V, I_D = 1nA
2.5
V_DS = 15V, I_D = 0.5mA
-1
V_GS = 15V, V_GS = 0
5
V_DS = 0, I_G = 1mA
V_DS = 15V, V_GS = 0, f = 1KHz
V_DS = 15V, V_GS = 0, f = 1KHz
V_DS = 15V, V_GS = 0, f = 1MHz
V_DS = 15V, V_GS = 0, f = 1MHz
V_DS = 15V, V_GS = 0, f = 1MHz
4500
V
1
nA
200
nA
6
V
-5.5
V
15
µA
1
V
7500
50
4
0.9
2
µmhos
µmhos
PF
PF
PF
NF
Noise Figure
V_DS = 15V, I_D = 5mA, R_g = 100Ω,
f = 100MHz
2
dB
4
G_ps
Common Source Power Gain
V_DS = 15V, I_D = 5mA, R_g = 100Ω, 18
dB
f = 100MHz
10
©2002 Fairchild Semiconductor Corporation
Rev. A, May 2002