HLB124-TO-220 Datasheet, PDF (1/3 Pages) Advanced Analogic Technologies – NPN EPITAXIAL SILICON TRANSISTOR

UTC HLB124 NPN EPITAXIAL SILICON TRANSISTOR
NPN EPITAXIAL PLANAR TRANSISTOR
DESCRIPTION
The UTC HLB124 is designed for high voltage, high
speed switching inductive circuits, and amplifier
applications.
1
FEATURES
* High Speed Switching
* Low Saturation Voltage
* High Reliability
TO-220
1: BASE 2: COLLECTOR 3: EMITTER
*Pb-free plating product number: HLB124L
ABSOLUTE MAXIMUM RATINGS
(Ta=25℃)
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current (DC)
Collector Current (PULSE)
Base Current (DC)
Base Current (PULSE)
Total Power Dissipation (Tc=25℃)
Junction Temperature
Storage Temperature
SYMBOL
V_CBO
V_CEO
V_EBO
Ic
I_CP
I_B
I_BP
Pc
T_J
T_STG
RATINGS
600
400
8
2
4
1
2
35
150
-40 ~ +150
ELECTRICAL CHARACTERISTICS
(Ta=25℃, unless otherwise specified.)
PARAMETER
SYMBOL
Collector-Base Breakdown Voltage
BV_CBO
Collector-Emitter Breakdown Voltage
BV_CEO
Emitter-Base Breakdown Voltage
BV_EBO
Collector Cutoff Current
I_CBO
Emitter Cutoff Current
I_EBO
C-E Saturation Voltage
*V_{CE (sat) 1}
*V_{CE (sat) 2}
B-E Saturation Voltage
*V_{BE (sat) 1}
*V_{BE (sat) 2}
*h_FE1
DC Current Gain
*h_FE2
*h_FE3
Gain-Bandwidth Product
f_T
*Pulse Test : Pulse Width ≤ 380µs, Duty Cycle ≤ 2%
CLASSIFICATION OF HFE1
TEST CONDITIONS
I_C = 1mA
I_C = 10mA
I_E = 1mA
V_CB = 600V
V_EB = 9V, I_C = 0
I_C = 0.1A, I_B = 10mA
I_C = 0.3A, I_B = 30mA
I_C = 0.1A, I_B = 10mA
I_C = 0.3A, I_B = 30mA
V_CE = 5V, I_C = 0.3A
V_CE = 5V, I_C = 0.5A
V_CE = 5V, I_C = 1A
V_CE = 10V, I_C = 0.3A, f=1MHz
UTC UNISONIC TECHNOLOGIES CO., LTD.
www.unisonic.com.tw
UNIT
V
V
V
A
A
A
A
W
℃
℃
MIN TYP MAX UNIT
600
V
400
V
8
V
10 µA
10 µA
0.3 V
0.8 V
0.9 V
1.2 V
10
40
10
6
15
MHz
1
QW-R203-029,A