AT49BV002A Datasheet, PDF (1/18 Pages) ATMEL Corporation – 2-megabit (256K x 8) Single 2.7-volt Battery-Voltage Flash Memory

Features
• Single Supply for Read and Write: 2.7 to 3.6V
• Fast Read Access Time – 70 ns
• Internal Program Control and Timer
• Sector Architecture
– One 16K Bytes Boot Block with Programming Lockout
– Two 8K Bytes Parameter Blocks
– Four Main Memory Blocks (One 32K Bytes, Three 64K Bytes)
• Fast Erase Cycle Time – 4 Seconds
• Byte-by-Byte Programming – 30 µs/Byte Typical
• Hardware Data Protection
• DATA Polling for End of Program Detection
• Low Power Dissipation
– 15 mA Active Current
– 50 µA CMOS Standby Current
• Typical 10,000 Write Cycles
Description
The AT49BV002A(N)(T) is a 2.7-volt-only in-system reprogrammable Flash Memory.
Its 2 megabits of memory is organized as 262,144 words by 8 bits. Manufactured with
Atmel’s advanced nonvolatile CMOS technology, the device offers access times to
70 ns with power dissipation of just 54 mW over the industrial temperature range.
Pin Configurations
Pin Name
A0 - A17
CE
OE
WE
RESET
I/O0 - I/O7
Function
Addresses
Chip Enable
Output Enable
Write Enable
RESET
Data Inputs/Outputs
PLCC Top View
VSOP Top View (8 x 14 mm) or
TSOP Top View (8 x 20 mm)
Type 1
A11 1
A9 2
A8 3
A13 4
A14 5
A17 6
WE 7
VCC 8
*RESET 9
A16 10
A15 11
A12 12
A7 13
A6 14
A5 15
A4 16
32 OE
31 A10
30 CE
29 I/O7
28 I/O6
27 I/O5
26 I/O4
25 I/O3
24 GND
23 I/O2
22 I/O1
21 I/O0
20 A0
19 A1
18 A2
17 A3
2-megabit
(256K x 8)
Single 2.7-volt
Battery-Voltage
Flash Memory
AT49BV002A
AT49BV002AN
AT49BV002AT
AT49BV002ANT
A7 5
A6 6
A5 7
A4 8
A3 9
A2 10
A1 11
A0 12
I/O0 13
29 A14
28 A13
27 A8
26 A9
25 A11
24 OE
23 A10
22 CE
21 I/O7
Note: *This pin is a NC on the AT49BV002AN(T).
Rev. 3353E–FLASH–10/04
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