AWT6168 Datasheet, PDF (5/12 Pages) ANADIGICS, Inc – GSM/GPRS/Polar EDGE Power Amplifier Module with Integrated Power Control

AWT6168
Table 7: Electrical Characteristics for GSM850/900 GMSK mode
Unless otherwise specified: VBATT = 3.5 V, PIN = 5 dBm, Pulse Width =1154 µs, Duty 25%,
ZIN = ZOUT = 50 Ω, TC = 25 °C, VRAMP = 1.6 V, BS = LOW, TX_EN = HIGH, MODE = LOW
PARAMETER
MIN TYP MAX UNIT
COMMENTS
Operating Frequency ( Fo )
824
880
-
-
849
915
MHz
Input Power
3
5
8
dBm
Output Power, PMAX
34.5 35
-
dBm Freq = 824 to 915 MHz
Degraded Output Power
32.0 32.5 -
dBm
VBATT = 3.0 V, TC = 85 °C
PIN = 3 dBm
PAE @ PMAX
-
55
-
% Freq = 824 to 915 MHz
Forward Isolation 1
Forward Isolation 2
-
-37
-
dBm TX_EN = LOW, PIN = 8 dBm
-
-25
-
dBm TX_EN = HIGH,VRAMP = 0.2V, PIN = 8 dBm
Cross Isolation
(2Fo @ DCS/PCS port)
-
-25
-
dBm VRAMP =0.2V to VRAMP_MAX
Second Harmonic
-
-20
-
dBm Over all output power levels
Third Harmonic
-
-30
-
dBm Over all output power levels
Stability
VSWR = 8:1 All Phases , POUT < 34.5 dBm
-
-
-36
dBm FOUT < 1 GHz
-
-
-30
dBm FOUT > 1 GHz
Ruggedness
10:1 -
-
- All Load Phases
RX Noise Power
-
-86
-
dBm
FTX = 849 MHz, RBW = 100 kHz
FRX = 869 to 894 MHz, POUT < 34.5 dBm
-
-80
-
dBm
FTX = 915 MHz, RBW = 100 kHz,
FRX = 925 to 935 MHz, POUT < 34.5 dBm
-
-86
-
dBm
FTX = 915 MHz, RBW = 100 kHz,
FRX = 935 to 960 MHz, POUT < 34.5 dBm
Input Return Loss
-
- 2.5:1 VSWR Over all output power levels
ADVANCED PRODUCT INFORMATION - Rev 0.1
5
01/2005