RFS1003 Datasheet, PDF (1/4 Pages) ANADIGICS, Inc – 5.1-5.9 GHz U-NII Power Amplifier

Applications
• U-NII fixed-wireless CPE
• 5 GHz ISM band wireless equipment
• WLAN/802.11a/HIPERLAN/2
24 23 22 21 20 19
N/C 1
N/C 2
GND 3
RF IN 4
GND 5
N/C 6
Input
Match
Interstage
Match
Interstage
Match
18 N/C
17 GND
16 RF OUT
15 RF OUT
14 RF OUT
13 GND
7
8
9 10 11 12
Functional Block Diagram
RFS1003
5.1-5.9 GHz U-NII Power Amplifier
Product Description
The RFS1003 power amplifier is a high-power, high-
performance GaAs MESFET IC designed for use in
transmit applications in the 5.1-5.9 GHz frequency
band. With a P1dB of 29 dBm, the device is ideal as a
final stage for wireless applications requiring high
transmit linearity. The input of the PA is matched to 50
ohms and the output can be easily matched for optimum
linearity and power performance at the desired
frequency of operation between 5.1 and 5.9 GHz.
Product Features
• 29 dBm P1dB@7V
• 24 dBm P1dB@3V
• 20 dB gain
• Input matched to 50 ohms
• Simple output matching
INDEX AREA
4.00
4.00
TOP VIEW
1.00
0.80
0.05
SIDE VIEW
4
0.45
0.35
0.275
0.225
Pin 1
24
1
0.50 TYP
1.00
2.80 SQ
BOTTOM VIEW
1 ALL DIMENSIONS ARE IN
MILLIMETERS, ANGLES IN DEGREES.
2 THE TERMINAL #1 IDENTIFIER AND
PAD NUMBERING CONVENTION SHALL
CONFORM TO JESD 95-1 SPP-012
3 LEAD COPLANARITY: 0.05 MAX.
4 DIMENSION APPLIES TO METALLIZED
PAD AND IS MEASURED BETWEEN 0.25
AND 0.30 MM FROM PAD TIP.
4x4 mm Package Outline
05/2003