PD500 Datasheet, PDF (1/2 Pages) ANADIGICS, Inc – 500μm InGaAs Photodiode

FEATURES
• Planar Structure
• Dielectric Passivation
• High Shunt Resistance
• High Responsivity
APPLICATIONS
• High Sensitivity Instrumentation
• Laser Back Facet Monitoring
PRODUCT DESCRIPTION
The PD500 is an InGaAs photodiode with a
photosensitive region 500μm in diameter. It is
intended for use in high sensitivity
instrumentation, laser back-facet monitoring
and low bit rate communication systems.
ELECTRICAL CHARACTERISTICS
PD500
500μm InGaAs Photodiode
PD500-0xx
Ceramic Sub-Mount
PD500-1xx
TO can Package
Planar semiconductor design and dielectric
passivation provide superior noise performance.
The device can be assembled on a ceramic sub-
mount or in an hermetic TO46 can. Custom
packages are an option.
Table 1: Electrical Specifications
PARAMETER
Dark Current (I_D) ⁽¹⁾
Capacitance ⁽²⁾
MIN
TYP
-
25
-
20
Responsivity at 1310nm
0.80
0.90
Responsivity at 1550nm
0.85
0.95
Rise/Fall time
Shunt Resistance (Class A) ⁽²⁾
-
3
50
-
(1) 5V reverse bias
(2) 0V reverse bias
MAX
-
-
-
-
-
-
UNIT
nA
pF
A/W
A/W
ns
MΩ