PD1M Datasheet, PDF (1/2 Pages) ANADIGICS, Inc – 1mm InGaAs Photodiode

FEATURES
• Planar Structure
• Dielectric Passivation
• High Shunt Resistance
• High Responsivity
APPLICATIONS
• Sensing
• High Sensitivity Instrumentation
PRODUCT DESCRIPTION
The PD1M is an InGaAs photodiode with a
photosensitive region 1mm in diameter.
Applications include sensing and other high
sensitivity instrumentation. Class A devices
feature very low dark current and high shunt
resistance.
PD1M
1mm InGaAs Photodiode
PD1M-0xx
Ceramic Sub-Mount
PD1M-1xx
TO46 can Package
High reliability is assured through planar
semiconductor design and dielectric passivation.
The device can be assembled on a ceramic sub-
mount or in an hermetic TO46 can. Custom
packages are an option.
ELECTRICAL CHARACTERISTICS
Table 1: Electrical Specifications
PARAMETER
Dark Current (I_D) ⁽¹⁾
Capacitance ⁽²⁾
MIN
TYP
-
50
-
150
Responsivity at 1310nm
0.80
0.90
Responsivity at 1550nm
0.85
0.95
Rise/Fall time
Shunt Resistance (Class A) ⁽²⁾
Shunt Resistance (Class B) ⁽²⁾
-
15
50
-
1
-
(1) 1V reverse bias
(2) 0V reverse bias
MAX
-
-
-
-
-
-
-
UNIT
nA
pF
A/W
A/W
ns
MΩ
MΩ