PD030 Datasheet, PDF (1/2 Pages) ANADIGICS, Inc – 30μm InGaAs Photodiode

FEATURES
• Planar Structure
• Very High Speed
• Low Dark Current
• Dielectric Passivation
• 100% Purge Burn-in
APPLICATIONS
• 10Gb/s Optical Receivers
• Test and Measurement
PRODUCT DESCRIPTION
The PD030 is an InGaAs photodiode with a
photosensitive region 30μm in diameter. It is
intended for use in very high speed, low noise
communication systems (up to 10Gb/s data
rates) and for use in optical test and
measurement equipment.
Planar semiconductor design and dielectric
passivation provide low noise performance.
PD030
30μm InGaAs Photodiode
PD030-003-0xx
Ceramic Sub-Mount
PD030-003-1xx
TO can Package
Reliability is assured by hermetic sealing and
100% purge burn-in (200°C, 15 hours, Vr = 20V).
The device can be assembled on a ceramic sub-
mount or in a TO can. It can be pigtailed with SC,
FC, or ST connectors (UPC or APC). It can also
be mounted in an SC, ST of FC receptacle.
Custom packages are an option.
ELECTRICAL CHARACTERISTICS
Table 1: Electrical Specifications
PARAMETER
MIN
Dark Current (I_D)
-
Capacitance (Ceramic sub-mount) ⁽¹⁾
-
Capacitance (TO can) ⁽¹⁾
-
Responsivity at 1310nm (Ceramic sub-mount)
0.80
Responsivity at 1550nm (Ceramic sub-mount)
0.85
Responsivity at 1310nm (TO can)
0.80
Responsivity at 1550nm (TO can)
3dB bandwidth (50Ω) (Ceramic sub-mount) ⁽¹⁾
3dB bandwidth (50Ω) (TO can) ⁽¹⁾
0.85
9000
5800
Operating voltage
-
(1) 5V bias voltage
TYP
0.1
0.27
0.4
0.90
0.95
0.85
0.90
11000
7200
5
MAX
1.0
0.32
0.5
-
-
-
-
-
-
20
UNIT
nA
pF
pF
A/W
A/W
A/W
A/W
MHz
MHz
V