AWU6616 Datasheet, PDF (1/11 Pages) ANADIGICS, Inc – HELP3E Dual-band 1 & 5, 6 CDMA/WCDMA 3.4 V Linear Power Amplifier Module

FEATURES
• InGaP HBT Technology
AWU6616
HELP3E^TM Dual-band 1 & 5, 6 CDMA/WCDMA
3.4 V Linear Power Amplifier Module
Data Sheet - Rev 2.3
• High Efficiency (R99):
• 37 % @ POUT = +28.1 dBm (Band 1)
• 38 % @ POUT = +28.7 dBm (Band 5, 6)
• 24 % @ POUT = +16.5 dBm
• 8.5 % @ POUT = +8 dBm
AWU6616
• Low Quiescent Current: 4 mA
• Internal Voltage Regulation
• Built-in Directional Coupler
• Common VMODE Control Line
E _{• Simplified VCC Bus PCB routing}
• Reduced External Component Count
T • Low Profile Surface Mount Package: 1 mm
• RoHS Compliant Package, 260 ^oC MSL-3
E _APPLICATIONS
• Band 1 +5, 6 Dual-band WCDMA/HSPA wireless
L devices
• Band Class 0+6 Dual-band CDMA/EVDO
wireless devices.
O • Band Class 0+6 Dual-band EVDO Rev. B
wireless devices.
PRODUCT DESCRIPTION
S _{AWU6616 addresses the demand for increased}
integration in dual-band handsets for WCDMA and
CDMA networks. The small footprint 3 mm x 5 mm
B x 1 mm surface- mount RoHS compliant package
contains independent RF PA paths to ensure optimal
performance in both frequency bands, while achieving
O ^{a 25% PCB space savings compared with solutions}
M47 Package
14 Pin 3 mm x 5 mm x 1 mm
Surface Mount Module
power levels where the PA typically operates, thereby
dramatically increasing handset talk-time. Its built-in
voltage regulator eliminates the need for external
switches. This PA has built-in directional couplers
for each band, with a common coupler output port
CPL_OUT. These couplers provide high directivity and
23 dB Coupling. The 3 mm x 5 mm x 1 mm surface
mount package incorporates matching networks
optimized for output power, efficiency and linearity in
a 50 Ω system.
VEN_800 1
Bias Control
Voltage Regulation
14 GND
RFIN_800 2
CPL
13 RFOUT_800
requiring two single-band PAs. The package pinout
was chosen to enable handset manufacturers to easily
VMODE1 3
12 VCC
route bias to both power amplifiers and simplify control
with common mode pins. The device is manufactured
VBATT 4
11 VCCA
on an advanced InGaP HBT MMIC technology offering
state-of-the-art reliability, temperature stability, and
VMODE2 5
10 CPLOUT
ruggedness. The AWU6616 is part of ANADIGICS’
High-Efficiency-at-Low-Power (HELP™) family of
WCDMA power amplifiers, which deliver low quiescent
RFIN_IMT 6
CPL
9 GND
currents and significantly greater efficiency without
the need of an external DC-DC converter. Through
VEN_IMT 7
Bias Control
Voltage Regulation
8 RFOUT_IMT
selectable bias modes, the AWU6616 achieves
GND at Slug (pad)
optimal efficiency, specifically at low- and mid-range
Figure 1: Block Diagram
02/2012