AWT6638 Datasheet, PDF (1/13 Pages) ANADIGICS, Inc – HELP3DC (Band 8) LTE/WCDMA Linear PA Module

FEATURES
• WCDMA/HSPA, LTE Compliant
• 3^rd generation HELP^TM Technology
• High Efficiency: (R99 waveform)
•40 % @ POUT = +28.5 dBm
•22 % @ POUT = +17 dBm
• Simpler Calibration with only 2 Bias Modes
• Optimized for SMPS Supply
• Low Quiescent Current: 9 mA
• Low Leakage Current in Shutdown Mode: <5 µA
• Internal Voltage Regulator
• Integrated “daisy chainable” directional couplers
with CPLIN and CPLOUT Ports
• Optimized for a 50 Ω System
• Low Profile Miniature Surface Mount Package
• Internal DC blocks IN/OUT RF ports
• 1.8 V Control Logic
• RoHS Compliant Package, 260 ^oC MSL-3
APPLICATIONS
• WCDMA/HSPA/LTE 900 MHz Band Wireless
Handsets and Data Devices
AWT6638
HELP3DC^TM (Band 8)
LTE/WCDMA Linear PA Module
PRELIMINARY DATA SHEET - Rev 1.3
AWT6638
10 Pin 3 mm x 3 mm x 1 mm
Surface Mount Module
and standby time. The self-contained3 mm x 3 mm x
1 mm surface mount package incorporates matching
networks optimized for output power, efficiency, and
linearity in a 50 Ω system.
PRODUCT DESCRIPTION
The AWT6638 PA is designed to provide highly linear
output for WCDMA and LTE handsets and data
devices with high efficiency at both high and low power
modes.This HELP3DC^TM PA can be used with an
external switch mode power supply (SMPS) to improve
its efficiency and reduce current consumption further
at medium and low output powers.A “daisy chainable”
directional coupler is integrated in the module thus
eliminating the need of external couplers. The
device is manufactured on an advanced InGaP HBT
MMIC technology offering state-of-the-art reliability,
temperature stability, and ruggedness. There are two
selectable bias modes that optimize efficiency for
different output power levels, and a shutdown mode
with low leakage current, which increases handset talk
VBATT
1
GND at Slug (pad)
10 _VCC
RFIN ²
VMODE2 (N/C) ³
VMODE1
4
CPL
9
RFOUT
Bias Control
Voltage Regulation
8 _CPLIN
7 _GND
VEN ⁵
Figure 1: Block Diagram
6 _CPLOUT
02/2012