AWT6301 Datasheet, PDF (1/10 Pages) ANADIGICS, Inc – CELLULAR DUAL MODE AMPLS/CDMA 3.4V/28 dBm LINEAR POWER AMPLIFIER MODULE

FEATURES
• InGaP HBT Technology
• High Efficiency: 53 % AMPS, 39 % CDMA
• Low Quiescent Current: 50 mA
• Low Leakage Current in Shutdown Mode: <1 mA
• VREF = +2.85 V (+2.7 V Min Over Temp.)
• Optimized for a 50 W System
• Low Profile Surface Mount Package: 1.1mm
• CDMA 1XRTT, 1xEV-DO Compliant
• Pinout Enables Easy Phone Board Migration
From 4mm x 4mm Package
AWT6301
Cellular Dual Mode AMPS/CDMA
3.4 V/28 dBm Linear Power Amplifier Module
ADVANCED PRODUCT INFORMATION - Rev 0.1
APPLICATIONS
• Single Mode CDMA Wireless Handsets
• Dual Mode AMPS/CDMA Wireless Handsets
M9 Package
8 Pin 3mm x 3mm
Surface Mount Module
PRODUCT DESCRIPTION
The AWT6301 meets the increasing demands for
higher efficiency and linearity in AMPS/CDMA 1X
handsets, while reducing pcb area by 44%. The
package pinout was chosen to enable handset
manufacturers to switch from a 4mm x 4mm PA
module with very few layout changes to the phone
board. The device is manufactured on an advanced
InGaP HBT MMIC technology offering state-of-the-
art reliability, temperature stability, and ruggedness.
Selectable bias modes that optimize efficiency for
different output power levels, and a shutdown mode
with low leakage current, serve to increase handset
talk and standby time. The self contained 3mm x
3mm surface mount package incorporates matching
networks optimized for output power, efficiency and
linearity in a 50 W system.
GND at slug (pad)
VREF 1
8 GND
VMODE 2
Bias Control
7 RFOUT
RFIN 3
6 GND
VCC1 4
V 5
CC2
Figure 1: Block Diagram
10/2003