AWT6277R_08 Datasheet, PDF (1/8 Pages) ANADIGICS, Inc – HELPTM IMT/WCDMA 3.4 V/28.5 dBm Linear Power Amplifier Module

FEATURES
• InGaP HBT Technology
• High Efficiency:
44% @ POUT = +28.5 dBm
21% @ POUT = +16 dBm
16% @ POUT = +7 dBm
• Low Quiescent Current: 15 mA
• Low Leakage Current in Shutdown Mode: <1 µA
• VREF = +2.85 V (+2.75 V min over temp)
• Optimized for a 50 Ω System
• Low Profile Miniature Surface Mount Package
• RoHS Compliant Package Option, 250 ^oC MSL-3
• HSPA Compliant (no backoff)
APPLICATIONS
• WCDMA/HSPA IMT-Band Wireless Handsets and
Data Devices
AWT6277R
HELP^TM IMT/WCDMA 3.4 V/28.5 dBm
Linear Power Amplifier Module
Data Sheet - Rev 2.1
AWT6277R
M20 Package
10 Pin 4 mm x 4 mm x 1 mm
Surface Mount Module
PRODUCT DESCRIPTION
The AWT6277 meets the increasing demands for
higher output power in UMTS handsets. The PA
module is optimized for VREF = +2.85 V, a requirement
for compatibility with the Qualcomm® 6250 chipset.
The device is manufactured on an advanced InGaP
HBT MMIC technology offering state-of-the-art
reliability, temperature stability, and ruggedness.
Selectable bias modes that optimize efficiency for
different output power levels, and a shutdown mode
with low leakage current, increase handset talk and
standby time. The self-contained 4 mm x 4 mm x 1
mm surface mount package incorporates matching
networks optimized for output power, efficiency, and
linearity in a 50 Ω system.
GND at slug (pad)
VCC 1
10 VCC
RFIN 2
9 GND
GND 3
8 RFOUT
VMODE 4
Bias Control
7 GND
VREF 5
6 GND
Figure 1: Block Diagram
11/2008