AWT6276 Datasheet, PDF (1/8 Pages) ANADIGICS, Inc – HELPTM PCS/WCDMA 3.4 V/29.5 dBm Linear Power Amplifier Module

FEATURES
• InGaP HBT Technology
• High Efficiency:
45 % @ POUT = +29.5 dBm
21 % @ POUT = +16 dBm
16 % @ POUT = +7 dBm
• Low Quiescent Current: 15 mA
• Low Leakage Current in Shutdown Mode: <1 µA
• VREF = +2.85 V (+2.75 V min over temp)
• Optimized for a 50 Ω System
• Low Profile Miniature Surface Mount Package
• RoHS Compliant Package, 250 ^oC MSL-3
• HSPA Compliant (no backoff)
APPLICATIONS
• WCDMA/HSPA PCS-Band Wireless Handsets
and Data Devices
AWT6276
HELP^TM PCS/WCDMA 3.4 V/29.5 dBm
Linear Power Amplifier Module
Data Sheet - Rev 2.1
AWT6276R
M20 Package
10 Pin 4 mm x 4 mm x 1 mm
Surface Mount Module
PRODUCT DESCRIPTION
The AWT6276 meets the increasing demands for
higher output power in UMTS handsets. The PA
module is optimized for VREF = +2.85 V, a requirement for
compatibility with the Qualcomm® 6275 chipset. The
device is manufactured on an advanced InGaP HBT
MMIC technology offering state-of-the-art reliability,
temperature stability, and ruggedness. Selectable
bias modes that optimize efficiency for different output
power levels, and a shutdown mode with low leakage
current, increase handset talk and standby time. The
self-contained 4 mm x 4 mm x 1 mm surface mount
package incorporates matching networks optimized for
output power, efficiency, and linearity in a 50 Ω system.
GND at slug (pad)
VCC 1
10 VCC
RFIN 2
9 GND
GND 3
8 RFOUT
VMODE 4
Bias Control
7 GND
VREF 5
6 GND
Figure 1: Block Diagram
11/2008