AWT6275 Datasheet, PDF (1/8 Pages) ANADIGICS, Inc – HELPTM IMT/WCDMA 3.4V/27.5dBm Linear Power Amplifier Module

FEATURES
• InGaP HBT Technology
• High Efficiency:
43% @ POUT = +27.5 dBm
21% @ POUT = +16 dBm
15% @ POUT = +7 dBm
• Low Quiescent Current: 16 mA
• Low Leakage Current in Shutdown Mode:<1 mA
• VREF = +2.85 V (+2.75 V min over temp)
• Optimized for a 50 V System
• Low Profile Miniature Surface Mount Package
• RoHS Compliant Package, 250 ^oC MSL-3
• HSPA Capable
AWT6275
HELP^TM IMT/WCDMA 3.4V/27.5dBm
Linear Power Amplifier Module
Data Sheet - Rev 2.2
AWT6275
APPLICATIONS
• WCDMA/HSPA IMT-Band Wireless Handsets
and Data Devices
PRODUCT DESCRIPTION
The AWT6275 meets the increasing demands for
higher output power in UMTS handsets. The PA
module is optimized for VREF = +2.85 V, a require-
ment for compatibility with the Qualcomm® 6250
chipset. The device is manufactured on an ad-
vanced InGaP HBT MMIC technology offering
state-of-the-art reliability, temperature stability, and
ruggedness. Selectable bias modes that optimize
efficiency for different output power levels, and a
M20 Package
10 Pin 4 mm x 4 mm x 1 mm
Surface Mount Module
shutdown mode with low leakage current, increase
handset talk and standby time. The self-contained
4 mm x 4 mm x 1 mm surface mount package
incorporates matching networks optimized for output
power, efficiency, and linearity in a 50 V system.
GND at slug (pad)
VCC 1
10 VCC
RFIN 2
9 GND
GND 3
8 RFOUT
VMODE 4
Bias Control
7 GND
VREF 5
6 GND
Figure 1: Block Diagram
11/2008