AWT6270 Datasheet, PDF (1/8 Pages) ANADIGICS, Inc – HELP 830-840 MHz WCDMA 3.4V/27dBm Linear Power Amplifier Module

FEATURES
• InGaP HBT Technology
• High Efficiency:
44% @ POUT = +27 dBm
21% @ POUT = +16 dBm
15% @ POUT = +7 dBm
• Low Quiescent Current: 16 mA
• Low Leakage Current in Shutdown Mode: <1 µA
• VREF = +2.85 V (+2.75 V min over temp)
• Optimized for a 50 Ω System
• Low Profile Miniature Surface Mount Package:
1.61 mm Max
APPLICATIONS
• Dual Band WCDMA Wireless Handsets
AWT6270
HELP^TM 830-840 MHz WCDMA 3.4V/27dBm
Linear Power Amplifier Module
PRELIMINARY DATA SHEET - Rev 1.5
AWT6270
M7 Package
10 Pin 4 mm x 4 mm x 1.6 mm
Surface Mount Module
PRODUCT DESCRIPTION
The AWT6270 meets the increasing demands for
higher output power in UMTS handsets. The PA module
is optimized for VREF = +2.85 V, a requirement for
compatibility with the Qualcomm® 6250 chipset. The
device is manufactured on an advanced InGaP HBT
MMIC technology offering state-of-the-art reliability,
temperature stability, and ruggedness. Selectable
bias modes that optimize efficiency for different output
power levels, and a shutdown mode with low leakage
current, increase handset talk and standby time. The
self-contained 4 mm x 4 mm x 1.6 mm surface mount
package incorporates matching networks optimized
for output power, efficiency, and linearity in a 50 Ω
system.
GND at slug (pad)
VREF 1
10 GND
VMODE 2
Bias Control
9 GND
GND 3
8 RFOUT
RFIN 4
7 GND
VCC 5
6 VCC
Figure 1: Block Diagram
01/2005