AWT6252 Datasheet, PDF (1/8 Pages) ANADIGICS, Inc – IMT/WCDMA 3.4V/27.5dBm Linear Power Amplifier Module

FEATURES
• InGaP HBT Technology
• High Efficiency: 39%
• Low Quiescent Current: 50 mA
• Low Leakage Current in Shutdown Mode: <1 µA
• VREF = +2.85 V (+2.75 V min over temp)
• Optimized for a 50 Ω System
• Low Profile Miniature Surface Mount Package:
1.56mm Max
APPLICATIONS
• Dual Mode 3GPP Wireless Handsets
AWT6252
IMT/WCDMA 3.4V/27.5dBm
Linear Power Amplifier Module
PRELIMINARY DATA SHEET - Rev 1.3
AWT6252
M7 Package
10 Pin 4 x 4 x 1.5 mm
Surface Mount Module
PRODUCT DESCRIPTION
The AWT6252 meets the increasing demands for
higher output power in 3GPP 1XRTT handsets. The PA
module is optimized for VREF = +2.85 V, a requirement
for compatibility with the Qualcomm® 6250 chipset.
The device is manufactured on an advanced InGaP
HBT MMIC technology offering state-of-the-art
reliability, temperature stability, and ruggedness.
Selectable bias modes that optimize efficiency for
different output power levels, and a shutdown mode
with low leakage current, increase handset talk and
standby time. The self-contained 4 x 4 x 1.5 mm surface
mount package incorporates matching networks
optimized for output power, efficiency, and linearity in a
50 Ω system.
GND at slug (pad)
VCC 1
10 VCC
RFIN 2
9 GND
GND 3
8 RFOUT
VMODE 4
Bias Control
7 GND
VREF 5
6 GND
Figure 1: Block Diagram
03/2004