AWT6251 Datasheet, PDF (1/12 Pages) ANADIGICS, Inc – PCS/WCDMA 3.4V/27.5 dBm Linear Power Amplifier Module

FEATURES
• InGaP HBT Technology
• High Efficiency: 38%
• Low Quiescent Current: 50 mA
• Low Leakage Current in Shutdown Mode: <1 µA
• VREF = +2.85 V (+2.75 V min over temp)
• Optimized for a 50 Ω System
• Low Profile Miniature Surface Mount Package:
1.56 mm Max
• RoHS Compliant Package Option, 250 ^oC MSL-3
APPLICATIONS
• Dual Mode 3GPP Wireless Handsets
AWT6251
PCS/WCDMA 3.4V/27.5 dBm
Linear Power Amplifier Module
PRELIMINARY DATA SHEET - Rev 1.3
AWT6251
M7 Package
10 Pin 4 mm x 4 mm x 1.5 mm
Surface Mount Module
PRODUCT DESCRIPTION
The AWT6251 meets the increasing demands for
higher output power in 3GPP handsets. The PA module
is optimized for VREF = +2.85 V, a requirement for
compatibility with the Qualcomm® 6250 chipset. The
device is manufactured on an advanced InGaP HBT
MMIC technology offering state-of-the-art reliability,
temperature stability, and ruggedness. Selectable
bias modes that optimize efficiency for different output
power levels, and a shutdown mode with low leakage
current, increase handset talk and standby time. The
self-contained 4 mm x 4 mm x 1.5 mm surface mount
package incorporates matching networks optimized
for output power, efficiency, and linearity in a 50 Ω
system.
GND at slug (pad)
VCC 1
10 VCC
RFIN 2
9 GND
GND 3
8 RFOUT
VMODE 4
Bias Control
7 GND
VREF 5
6 GND
Figure 1: Block Diagram
06/2005