AWT6167R Datasheet, PDF (1/12 Pages) ANADIGICS, Inc – GSM900/DCS Dual Band Power Amplifier Module With Integrated Power Control

FEATURES
• Integrated Vreg (regulated supply)
• Harmonic Performance ≤ -20 dBm
• High Efficiency (PAE) at Pmax:
-GSM900, 55%
-DCS, 53%
• +35 dBm GSM900 Output Power at 3.5 V
• +33 dBm DCS Output Power at 3.5 V
• 55 dB Dynamic Range
• GPRS Class 12 Capable
• RoHS Compliant Package, 250°C MSL-3
APPLICATIONS
• Dual/Tri/Quad Band Handsets & PDAs
AWT6167R
GSM900/DCS
Dual Band Power Amplifier Module
With Integrated Power Control
PRELIMINARY DATA SHEET - Rev 1.0
AWT6167R
M15 Package
18 Pin 6 mm x 6 mm x 1.3 mm
Amplifier Module
PRODUCT DESCRIPTION
As with previous generations, the AWT6167R
integrated CMOS power control scheme simplifies
the design of the transmitter by eliminating the need
for external power control circuitry.
The AWT6167R input and output terminals are
internal matched to 50 ohms and DC blocked,
reducing the number of external components
required in the final application. Both PA die, GSM900
and DCS, are fabricated using state of the art InGaP
HBT technology, known for it is proven reliability and
temperature stability.
VCC2
DCS_IN
BS
TX_EN
VBATT
CEXT
VRAMP
GSM900_IN
MATCH
CMOS BIAS/Integrated Power Control
H(s)
MATCH
MATCH
MATCH
DCS_OUT
VCC_OUT
GSM900_OUT
VCC2
Figure 1: Block Diagram
06/2005