AWT6167 Datasheet, PDF (1/12 Pages) ANADIGICS, Inc – GSM900/DCS Dual Band Power Amplifier Module With Integrated Power Control

FEATURES
• Integrated Vreg (regulated supply)
• Harmonic Performance ≤ -25 dBm
• High Efficiency (PAE) at Pmax:
-GSM900, 56 %
-DCS, 53 %
• +35 dBm GSM900 Output Power at 3.5 V
• +33 dBm DCS Output Power at 3.5 V
• 55 dB dynamic range
• GPRS Class 12 Capable
AWT6167
GSM900/DCS
Dual Band Power Amplifier Module
With Integrated Power Control
ADVANCED PRODUCT INFORMATION - Rev 0.1
AWT6167
APPLICATIONS
• Dual Band Handsets & PDAs
18 Pin
6 mm x 6 mm x 1.3 mm
Amplifier Module
PRODUCT DESCRIPTION
As with previous generations, the AWT6167
integrated CMOS power control scheme simplifies
the design of the transmitter by eliminating the need
for external power control circuitry.
The AWT6167 input and output terminals are internal
matched to 50 ohms and DC blocked, reducing the
number of external components required in the final
application. Both PA die, GSM900 and DCS, are
fabricated using state of the art InGaP HBT
technology, known for it is proven reliability and
temperature stability.
V_CC2
DCS_IN
B_S
TX _EN
V
BATT
V_REG
V_RAMP
GSM900_IN
MATCH
CMOS BIAS/Integrated Power Control
H(s)
MATCH
MATCH
MATCH
V_CC2
Figure 1: Block Diagram
01/2005
DCS_OUT
V
CC_OUT
GSM900
OUT