AWT6138 Datasheet, PDF (1/8 Pages) ANADIGICS, Inc – LINEAR POWER AMPLIFIER MODULE

FEATURES
• InGaP HBT Technology
• High Efficiency:
• 38% at +28 dBm
• 20% at +16 dBm
• 1.5% at 0 dBm
• Low Quiescent Current: 20 mA
• Low Leakage Current in Shutdown Mode: <1 mA
• VREF = +2.85 V (+2.7 V min over temp)
• Low Profile Surface Mount Package: 1.56mm Max
• CDMA 1XRTT and 1xEV-DO Compliant
AWT6138
HELP^TM PCS/CDMA 3.4V/28dBm
Linear Power Amplifier Module
ADVANCED PRODUCT INFORMATION - Rev 0.0
APPLICATIONS
• PCS CDMA Wireless Handsets
• Dual Band CDMA Wireless Handsets
PRODUCT DESCRIPTION
The AWT6138 PCS CDMA Power Amplifier is a high
performance CDMA2000/ 1XRTT amplifier designed
specifically for PCS wireless applications. This
rugged, easy to use InGaP HBT design delivers
state of the art efficiency and temperature stability
with very low DC power consumption. The
AWT6138 PA module has the lowest CDG currents
available to handset manufacturers today.
M7 Package
10 Pin 4mm x 4mm
Surface Mount Module
handset. The device has mode-switching to take
advantage of its high efficiency operation over a wide
range of output powers. Higher low power efficiency
is achieved without an external DAC or DC-DC
converter. The integrated power amplifier module
employs a proprietary bias control and temperature
compensation circuit that assures stable operation,
even at extreme temperature conditions.
A combination of low idle current and mode The self contained 4mm x 4mm surface mount
switching enables the AWT6138 to deliver package incorporates matching networks optimized
unparalleled CDMA average power efficiencies. for output power, efficiency and linearity in a 50[ohm]
This bias feature allows the AWT6138 to significantly system making it easy to incorporate the device into
increase the battery usage time of a mobile BOTH new and existing designs.
GND at slug (pad)
VCC 1
10 VCC
RFIN 2
9 GND
GND 3
8 RFOUT
VMODE 4
Bias Control
7 GND
VREF 5
6 GND
Figure 1: Block Diagram
09/2003