AWT6135 Datasheet, PDF (1/8 Pages) ANADIGICS, Inc – PCS/CDMA 3.4V/28dBm Linear Power Amplifier Module

FEATURES
• InGaP HBT Technology
• High Efficiency: 40%
• Low Quiescent Current: 48 mA
• Low Leakage Current in Shutdown Mode: <1 µA
• VREF = +2.8 V (+2.7 V min over temp)
• Optimized for a 50 Ω System
• Low Profile Miniature Surface Mount Package:
1.56mm Max
• CDMA 1XRTT Compliant
• CDMA 1xEV-DO Compliant
APPLICATIONS
• PCS CDMA Wireless Handsets
• Dual Band CDMA Wireless Handsets
AWT6135
PCS/CDMA 3.4V/28dBm
Linear Power Amplifier Module
PRELIMINARY DATA SHEET - Rev 1.1
M7 Package
10 Pin 4mm x 4mm
Surface Mount Module
PRODUCT DESCRIPTION
The AWT6135 meets the increasing demands for
higher efficiency and linearity in CDMA 1XRTT
handsets. The PA module is optimized for VREF = +2.8 V,
a requirement for compatibility with the Qualcomm®
6000 chipset. The device is manufactured on an
advanced InGaP HBT MMIC technology offering
state-of-the-art reliability, temperature stability, and
ruggedness. Selectable bias modes that optimize
efficiency for different output power levels, and a
shutdown mode with low leakage current, increase
handset talk and standby time. The self-contained
4mm x 4mm surface mount package incorporates
matching networks optimized for output power,
efficiency, and linearity in a 50 Ω system.
GND at slug (pad)
VCC 1
10 VCC
RFIN 2
9 GND
GND 3
8 RFOUT
VMODE 4
Bias Control
7 GND
VREF 5
6 GND
Figure 1: Block Diagram
08/2003