AWC6312R Datasheet, PDF (1/8 Pages) ANADIGICS, Inc – HELP3TM PCS CDMA 3.4V/28dBm Linear Power Amplifier Module

FEATURES
• InGaP HBT Technology
• High Efficiency:
40 % @ +28 dBm output
23 % @ +16 dBm output
• Low Quiescent Current: 8 mA
• Low Leakage Current in Shutdown Mode: <1 µA
• Internal Voltage Regulation (no need for DC/DC
Converter
• Optimized for a 50 Ω System
• Low Profile Miniature Surface Mount Package:
1 mm
• CDMA 1XRTT, 1xEV-DO Compliant
• RoHS-Compliant Package, 250 ^oC MSL-3
APPLICATIONS
• CDMA/EVDO PCS-Band Wireless Handsets and
Data Devices
AWC6312R
HELP3^TM PCS CDMA 3.4V/28dBm
Linear Power Amplifier Module
Data Sheet - Rev 2.0
AWC6312R
M9 Package
8 Pin 3 mm x 3 mm x 1 mm
Surface Mount Module
PRODUCT DESCRIPTION
The AWC6312R meets the increasing demands
for higher efficiency and smaller footprint in CDMA
1X handsets. The AWC6312R uses ANADIGICS’
exclusive InGaP-Plus™ technology, which combines
HBT and pHEMT devices on the same die, to enable
state-of-the-art reliability, temperature stability, and
ruggedness. The AWC6312R is part of ANADIGICS’
High-Efficiency-at-Low-Power (HELP™) family of
CDMA power amplifiers, which deliver low quiescent
currents and significantly greater efficiency without
a costly external DAC or DC-DC converter. Through
selectable bias modes, the AWC6312R achieves
optimal efficiency across different output power
levels, specifically at low- and mid-range power levels
where the PA typically operates, thereby dramatically
increasing handset talk-time and standby-time. Its
built-in voltage regulator eliminates the need for
external voltage regulation components. The 3 mm x
3 mm x 1 mm surface mount package incorporates
matching networks optimized for output power,
efficiency, and linearity in a 50 Ω system.
VBATT ¹
RFIN 2
VMODE 3
GND at slug (pad)
8 VCC
7 RFOUT
Bias Control
6 GND
VEN 4
5 GND
01/2009
Figure 1: Block Diagram