13PD150-ST Datasheet, PDF (1/1 Pages) ANADIGICS, Inc – High Performance InGaAs p-i-n Photodiode

High Performance InGaAs p-i-n Photodiode
‘ST’ Active Device Mount
13PD150-ST
The 13PD150-ST, an InGaAs photodiode with a 150µm-diameter photosensitive region
packaged in a TO-46 header and aligned in an AT&T ST active device mount, is intended for
high coupling efficiency to multi-mode fiber in moderate-to-high speed applications. Planar
semiconductor design and dielectric passivation provide low noise performance. Reliability is
assured by hermetic sealing and a 100% purge burn-in ( 200^oC, 15 hours, V_r = 20V ). The ST
receptacle is suitable for bulkhead and PC board mounting.
Features
Planar Structure
Dielectric Passivation
100% Purge Burn-In
High Responsivity
Device Characteristics:
Parameters Test Conditions
Operating Voltage
-
Dark Current
-5V
-
Capacitance
-5V
-
Responsivity
1300nm
Rise/Fall
-
Min Typ Max Units
-
-
-20
Volts
0.5
2.5
nA
1.5
2.25
pF
0.7 0.8
-
A/W
-
-
0.5
ns
Absolute Maximum Ratings
Reverse Voltage
Forward Current
Reverse Current
Operating Temperature
Storage Temperature
Soldering Temperature
20 Volts
5 mA
1 mA
-40^oC to + 85^oC
-40^oC to + 85^oC
250^oC
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