AF2302N Datasheet, PDF (1/4 Pages) Anachip Corp – 20V N-Channel Enhancement Mode MOSFET

20V N-Channel Enhancement Mode MOSFET
AF2302N
Features
Product Summary
- Advanced trench process technology
- High density cell design for ultra low on-resistance
- Excellent thermal and electrical capabilities
- Compact and low profile SOT-23 package
V_DS = 20V
R_{DS (on)}, V_GS@4.5V, I_DS@3.6A =65mΩ.
R_{DS (on)}, V_GS@2.5V, I_DS@3.1A =95mΩ.
Pin Assignments
3
1
2
(Top View)
1. G
2. S
3. D
Pin Descriptions
Pin
Pin
No. Name
1
G
2
S
3
D
Description
Gate
Source
Drain
Ordering information
A X 2302N X X X
Feature
PN
Package
Lead Free
Packing
F :MOSFET
W: SOT23 Blank : Normal
Blank : Tube or Bulk
L : Lead Free Package A : Tape & Reel
Block Diagram
D
S
G
This datasheet contains new product information. Anachip Corp. reserves the rights to modify the product specification without notice. No liability is assumed as a result of the use of
this product. No rights under any patent accompany the sale of the product.
Rev. 1.1 Jul 20, 2004
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