TSL257S Datasheet, PDF (3/9 Pages) ams AG – HIGH-SENSITIVITY LIGHT-TO-VOLTAGE CONVERTER

TSL257
HIGH-SENSITIVITY
LIGHT-TO-VOLTAGE CONVERTER
TAOS023E − SEPTEMBER 2007
Absolute Maximum Ratings over operating free-air temperature range (unless otherwise noted)^†
Supply voltage, V_DD (see Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 V
Output current, I_O . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ± 10 mA
Duration of short-circuit current at (or below) 25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 s
Operating free-air temperature range, T_A . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −25°C to 85°C
Storage temperature range, T_stg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −25°C to 85°C
Lead temperature 1,6 mm (1/16 inch) from case for 10 seconds (S Package) . . . . . . . . . . . . . . . . . . . . 260°C
Reflow solder, in accordance with J-STD-020C or J-STD-020D (SM Package) . . . . . . . . . . . . . . . . . . . 260°C
† _{Stresses beyond those listed under “absolute maximum ratings” may cause permanent damage to the device. These are stress ratings only, and}
lid ^{functional operation of the device at these or any other conditions beyond those indicated under “recommended operating conditions” is not}
implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
NOTE 1: All voltages are with respect to GND.
a _{Recommended Operating Conditions}
ill ^{v Supply voltage, VDD}
Operating free-air temperature, T_A
MIN MAX UNIT
2.7 5.5 V
0
70 °C
G ^{t Electrical Characteristics at VDD = 5 V, TA = 25°C, λp = 470 nm, RL = 10 kΩ (unless otherwise noted)}
s _{(see Notes 2 and 3)}
A ^{t PARAMETER}
TEST CONDITIONS
MIN TYP MAX
UNIT
V_D
Dark voltage
E_e = 0
0
15
mV
s ^{n V}OM
e _VO
Maximum output voltage swing
Output voltage
V_DD = 4.5 V,
No Load
4.49
V_DD = 4.5 V,
R_L = 10 kΩ
4 4.2
V
E_e = 1.54 μW/cm², λ_p = 470 nm, Note 5
1.6
2 2.4
V
m ^{t αVD Temperature coefficient of dark voltage (VD) TA = 0°C to 70°C}
−15
μV/°C
a ^{n λp = 428 nm, see Notes 4 and 8}
1.18
o ^Ne
Irradiance responsivity
λ_p = 470 nm, see Notes 5 and 8
λ_p = 565 nm, see Notes 6 and 8
1.30
V/(μW/cm²)
1.58
λ_p = 645 nm, see Notes 7 and 8
1.68
c _{PSRR Power supply rejection ratio}
f_ac = 100 Hz, see Note 9
55
dB
l _{IDD Supply current}
f_ac = 1 kHz, see Note 9
E_e = 1.54 μW/cm², λ_p = 470 nm, Note 5
35
dB
1.9 3.5
mA
a NOTES: 2. Measured with RL = 10 kΩ between output and ground.
3. Optical measurements are made using small-angle incident radiation from a light-emitting diode (LED) optical source.
ic ^{4. The input irradiance is supplied by a GaN/SiC light-emitting diode with the following characteristics: peak wavelength λp = 428 nm,}
spectral halfwidth Δλ½ = 65 nm.
5. The input irradiance is supplied by an InGaN light-emitting diode with the following characteristics: peak wavelength λ_p = 470 nm,
spectral halfwidth Δλ½ = 35 nm.
n 6. The input irradiance is supplied by a GaP light-emitting diode with the following characteristics: peak wavelength λp = 565 nm,
spectral halfwidth Δλ½ = 28 nm.
h 7. The input irradiance is supplied by an AlGaAs light-emitting diode with the following characteristics: peak wavelength λp = 645 nm,
spectral halfwidth Δλ½ = 25 nm.
c 8. Irradiance responsivity is characterized over the range VO = 0.1 V to 4.5 V. The best-fit straight line of Output Voltage VO versus
Irradiance E_e over this range will typically have a positive extrapolated V_O value for E_e = 0.
Te^{9. Power supply rejection ratio PSRR is defined as 20 log (ΔVDD(f)/ΔVO(f)) with VDD(f = 0) = 5 V and VO(f = 0) = 2 V.}
Copyright E 2007, TAOS Inc.
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