AMS8205A Datasheet, PDF (1/7 Pages) Advanced Monolithic Systems Ltd – Super high density cell design for extremely low RDS(ON)

AMS8205A
DESCRIPTION
AMS8205A is the dual N-Channel enhancement mode power field effect transistor
which is produced using high cell density, DMOS trench technology. This high density
process is especially tailored to minimize on-state resistance. These devices are
particularly suited for low voltage application, such as notebook computer power
management and other battery powered circuits, where high-side switching is required.
PIN CONFIGURATION
TSSOP-8
D2 S2 S2 G2
87 6 5

AMS8205A
SYA
FEATURE
z 20V/6.0A, R = _DS(ON) 30m-ohm@VGS =4.5V
z 20V/5.0A, R_DS(ON) =42m-ohm@VGS =2.5V
z Super high density cell design for extremely
low R_DS(ON)
z Exceptional low on-resistance and maximum
DC current capability
z TSSOP-8 package design
1 23 4
D1 S1 S1 G1
SğSubcontractor
Y: Year
A: Week Code
ORDERING INFORMATION
Part Number
Package
AMS8205A
TSSOP-8
Week Code Code : A ~ Z(1~26) ; a ~ z(27~52)
AMS8205A ST8 : TSSOP-8; R: Tape Reel ; G: Pb – Free
Part Marking
SYA
1
Advanced Monolithic Systems http://www.ams-semitech.com