AMS3402 Datasheet, PDF (1/6 Pages) Advanced Monolithic Systems Ltd – Super high density cell design for extremely low RDS(ON)

AMS3402
DESCRIPTION
AMS3402 is the N-Channel logic enhancement mode power field effect transistor which is
produced using high cell density, DMOS trench technology. This high density process is
especially tailored to minimize on-state resistance. These devices are particularly
suited for low voltage application such as cellular phone and notebook computer power
management, other battery powered circuits, and low in-line power loss are required.
The product is in a very small outline surface mount package.
PIN CONFIGURATION
SOT-23-3L
3
D
G
S
1
2
1.Gate 2.Source 3.Drain
PART MARKING
SOT-23-3L
FEATURE
30V/2.8A, R_DS(ON) = 48mΩ
@VGS = 10V
30V/2.3A, R_DS(ON) = 53mΩ
@VGS = 4.5V
30V/1.5A, R_DS(ON) = 80mΩ
@VGS = 2.5V
Super high density cell design for
extremely low R_DS(ON)
Exceptional on-resistance and maximum
DC current capability
SOT-23-3L package design
3
A2YA
1
2
Y: Year Code A: Week Code
1
Advanced Monolithic Systems http://www.ams-semitech.com