AMS2319 Datasheet, PDF (1/8 Pages) Advanced Monolithic Systems Ltd – Super high density cell design for extremely low RDS(ON)

AMS2319
DESCRIPTION
AMS2319 is the P-Channel logic enhancement mode power field effect transistor is
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produced using high cell density, DMOS trench technology. This high density process
is especially tailored to minimize on-state resistance. These devices are particularly
suited for low voltage application such as cellular phone and notebook computer
power management and other battery powered circuits where high-side switching and
low in-line power loss are required in a very small outline surface mount package.
PIN CONFIGURATION
SOT-23
3
D
G
S
1
2
1.Gate 2.Source 3.Drain
PART MARKING
SOT-23
3
19YW
1
2
Y: Year Code W: Week Code
FEATURE
-40V/-3.5A, R_DS(ON) = 75mΩ (Typ.)
@VGS = -10V
-40V/-2.8A, R_DS(ON) = 105mΩ
@VGS = -4.5V
Super high density cell design for
extremely low R_DS(ON)
Exceptional on-resistance and maximum
DC current capability
SOT-23 package design
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Advanced Monolithic Systems http://www.ams-semitech.com