AMS2306 Datasheet, PDF (1/6 Pages) Advanced Monolithic Systems Ltd –
Super high density cell design for extremely low RDS(ON)

AMS2306
DESCRIPTION
AMS2306 is the N-Channel logic enhancement mode power field effect transistor which
is produced using high cell density, DMOS trench technology. This high density
process is especially tailored to minimize on-state resistance. These devices are
particularly suited for low voltage application such as cellular phone and notebook
computer power management, other battery powered circuits, and low in-line power
loss are required. The product is in a very small outline surface mount package.
PIN CONFIGURATION
SOT-23-3L
3
D
G
S
1
2
FEATURE
30V/3.5A, R_DS(ON) = 55m-ohm (Typ.)
@VGS = 4.5V
30V/3.1A, R_DS(ON) = 80m-ohm
@VGS = 2.5V
Super high density cell design for
extremely low R_DS(ON)
Exceptional on-resistance and maximum
DC current capability
SOT-23-3L package design
1.Gate 2.Source 3.Drain
ORDERING INFORMATION
Part Number
Package
AMS2306
g
SOT-23-3L
g
※ Process Code : A ~ Z ; a ~ z
Part Marking
04YA
1
Advanced Monolithic Systems http://www.ams-semitech.com