AMS2302 Datasheet, PDF (1/6 Pages) Advanced Monolithic Systems Ltd – Exceptional on-resistance and maximum DC current capability

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AMS2302
DESCRIPTION
AMS2302 is the N-Channel logic enhancement mode power field effect transistor which
y
y
y
is produced using high cell density, DMOS trench technology.This high density process
is especially tailored to minimize on-state resistance.These devices are particularly
suited for low voltage application such as cellular phone and notebook computer
power management, other battery powered circuits, and low in-line power loss are
required. The product is in a very small outline surface mount package.
PIN CONFIGURATION
SOT-23
3
D
G
S
1
2
FEATURE
20V/3.6A, R_DS(ON) = 70mΩ
@VGS = 4.5V
20V/3.1A, R_DS(ON) = 95 mΩ
@VGS = 2.5V
Super high density cell design for
extremely low R_DS(ON)
Exceptional on-resistance and maximum
DC current capability
SOT-23 package design
1.Gate 2.Source 3.Drain
PART MARKING
SOT-23
3
S02YA
1
2
Y: Year Code A: Process Code
ORDERING INFORMATION
Part Number
Package
AMS2302
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※ Process Code : A ~ Z ; a ~ z
SOT-23
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Part Marking
S02YA
1
Advanced Monolithic Systems http://www.ams-semitech.com