AMS2300 Datasheet, PDF (1/7 Pages) Advanced Monolithic Systems Ltd – transistor

AMS2300
DESCRIPTION
The AMS2300 i s the N-Channel logic enhancement mode power field effect transistor i s
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produced using high cell density, DMOS trench technology.
This high density process is especially tailored to minimize on-state resistance.These devices
are particularly suited for low voltage application such as cellular phone and notebook
computer power management and other batter powered circuits, and low i n-line power loss
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are needed in a very small outline surface mount package.
PIN CONFIGURATION
SOT-23-3L
3
D
G
S
1
2
1.Gate 2.Source 3.Drain
PART MARKING
SOT-23-3L
FEATURE
20V/6.0A, R_DS(ON) = 22mΩ (Typ.)
@VGS = 10V
20V/5.0A, R_DS(ON) = 36mΩ
@VGS = 4.5V
20V/4.5A, R_DS(ON) = 45mΩ
@VGS = 2.5V
20V/4.0A, R_DS(ON) = 60mΩ
@VGS = 1.8V
Super high density cell design for
extremely low R_DS(ON)
Exceptional on-resistance and
Maximum DC current capability
SOT-23-3L package design
3
42YA
1
2
Y: Year Code A: Process Code
ORDERING INFORMATION
Part Number
AMS2300
g
※ Process Code : A ~ Z ; a ~ z
Package
SOT-23-3L
g
Part Marking
42YA
1
Advanced Monolithic Systems http://www.ams-semitech.com