S2600D Datasheet, PDF (1/1 Pages) American Microsemiconductor – Silicon Control Rectifier

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S2600D
Silicon Control Rectifier
Electrical Characteristics
Military Spec
VDRM Max
ITRMS Max.
@Temp (Test Cond)
ITSM Max.
@tw One Cycle
IGT Max.
VGT Max
IH Max. Holding Current
ID Max. Leakage Current
@Temp (Test Cond)
VT Max.
@IT (Test Cond)
dv/dt Min.
tgt Turn On Time
tq Typ.
Minimum Op. Temp.
Maximum Op. Temp.
Package Style
Mounting Style
Value
N
400
7
60
100
--
15
1.5
15
500
100
2.6
30
200
1.2
65
-65
100
TO-205
Thru-hole
Unit
V
A
°C
A
s
mA
V
mA
μA
°C
V
A
A/μs
μs
μs
°C
°C
Abstract
S2600D is a general purpose, high
voltage, medium current Silicon Control
Rectifier designed for switching AC and
DC currents. The S2600D SCR is excellent
for for power switching, power control,
and ignition applications, but can be
utilized in a multitude of other electrical
designs. This type utilizes the low-profile
TO-205 can package style.
Features
 Low Switching Losses
 High Pulse Current Capability
 Low Forward and Reverse Leakage
 Sipos Oxide Glass Multilayer
Passivation System
 Advanced Unisurface Construction
 Precise Ion Implanted Diffusion
Source
Applications
 Power Switching
 Power Control
 Ignition Applications
 Lighting
 Motor Speed Control
Package Terminal Designations
Tel. [phone], Fax. [phone]
133 Kings Road,
Madison, New Jersey 07940
United States of America
© 2013 American Microsemiconductor, Inc.
Specifications are subject to change without notice.
www.americanmicrosemi.com
Document Page 1 of 1
Revised 06/2013
Aerospace Mgmt. Sys. Cert.
AS/EN/JISQ9100:2009 Rev. C
ISO9001:2008
Cert No. 45325