FSA2510P Datasheet, PDF (1/1 Pages) American Microsemiconductor – Monolithic Diode Array

FSA2510P
Monolithic Diode Array
CIRCUIT DIAGRAM (TOP VIEW)
FEATURES
 16 Diode Array
 Standard 14-pin Dual-In-Line Package (DIP)
 Plastic molded DIP casing
 Weight: 0.997 grams (approx.)
 Marking: device number
MAXIMUM RATINGS
Operating Temperatures:
Storage Temperature:
tstg
Forward Surge Current:
Continuous Forward Current: IF
Power Dissipation:
PD
Derating Factor:
-55°C to +150°C
-55°C to +150°C
2.0 Amps (8.3mS)
400 mA
500 mW
4.0 mW/°C
V(BR)
@10µA
IR
+25°C
V
µA
Min Max
@VR
60
1
30
CAP
@0V
pF
Max
4
trr
VF
VF
@IF=10mA ^@IF=100mA
nS
V
V
Max
Max
Max
10
1.0
1.0
Note: Product dimensional
data is marked in INCHES.
Tel. [phone], Fax. [phone]
133 Kings Road,
Madison, New Jersey 07940
United States of America
© 2014 American Microsemiconductor, Inc.
Specifications are subject to change without notice.
www.americanmicrosemi.com
Document Page 1 of 1
Revised 06/2013
Aerospace Mgmt. Sys. Cert.
AS/EN/JISQ9100:2009 Rev. C
ISO9001:2008
Cert No. 45325