DCR1004SN1212 Datasheet, PDF (1/4 Pages) American Microsemiconductor – High Power Button Capsule Thyristor

Type
Number
DCR1003SN1818 DCR1004SN1818
DCR1003SN1717 DCR1004SN1717
DCR1003SN1616 DCR1004SN1616
DCR1003SN1515 DCR1004SN1515
DCR1003SN1414 DCR1004SN1414
DCR1003SN1313 DCR1004SN1313
DCR1003SN1212 DCR1004SN1212
DCR1003SN1111 DCR1004SN1111
DCR1003SN1010 DCR1004SN1010
DCR1003SN0909 DCR1004SN0909
DCR1003SN0808 DCR1004SN0808
DCR1003SN0707 DCR1004SN0707
DCR1003SN0606 DCR1004SN0606
DCR1003SN0505 DCR1004SN0505
DCR1003SN0404 DCR1004SN0404
DCR1003SN0303 DCR1004SN0303
DCR1003SN0202 DCR1004SN0202
DCR1003SN0101 DCR1004SN0101
Non-Repetitive
Peak Voltages
VDSM VRSM
1800
1700
1600
1500
1400
1300
1200
1100
1000
900
800
700
600
500
400
300
200
100
CURRENT RATINGS― DOUBLE SIDE COOLED
IT(AV)
Mean on-state current
IRMS
RMS value
IT
Continuous (direct) on-state current
R(th(J-h)
Thermal resistance junction to
heatsink surface
CURRENT RATINGS―SINGLE SIDE COOLED
IT(AV)
Mean on-state current
IRMS
RMS value
IT
R(th(J-h)
Continuous (direct) on-state current
Thermal resistance junction to
heatsink surface
SURGE RATINGS
ITRM
Repetitive peak on-state current
I²t
I²t for fusing
ITSM
dlT/dt
Surge (non-repetitive) on-state current
Rate of rise of on-state current
dv/dt*
Max linear rate of rise of off-state voltage
*Higher values available.
GATE RATINGS
VFGM
Peak forward gate voltage
VFGN
Peak forward gate voltage
VRGM
Peak reverse gate voltage
IFGM
Peak forward gate current
PGM
Peak gate power
PG
Mean gate power
TEMPERATURE & FREQUENCY RATINGS
TVJ
Virtual junction temperature
Tstg
Storage temperature range
F
Frequency range
High Power
Button Capsule
Thyristor
Repetitive
Peak Voltages
VDRM VRRM
1700.
1600.
1500.
1400.
1300.
1200.
1100.
1000.
900.
800.
700.
600.
500.
400.
300.
200.
150.
75.
OUTLINE N
Half wave resistive load THS = 55^oC
THS = 55^oC
THS = 55^oC
Clamping force 19.5kN
(with mounting grease)
Half wave resistive load THS = 55^oC
THS = 55^oC
THS = 55^oC
Clamping force 19.5kN
(with mounting grease)
Sinusoidal waveform conduction angle
ɬ = 30^o THS = 55^oC
10mS half sine TJ = 125^oC
3mS half sine TJ = 125^oC
With 50% VRSM TJ = 125^oC
From VD to 1000A, Gate source 10V
5Ω rise time 0.5µs, TJ = 125^oC
Voltage = 67%VDRM, Tcase = 125^oC
Anode positive with respect to cathode
Anode negative with respect to cathode
Anode positive with respect to cathode
Pulse width = 100µ
On-state (conduction)
Off-state (blocking)
Tel. [phone] Fax. [phone]
133 Kings Road
Madison, New Jersey 07940
United States of America
© 2016 American Microsemiconductor, Inc.
Specifications are subject to change without notice
www.americanmicrosemi.com
DCR1003 Series
DCR1004 Series
I_{T(AV) = 1540A}
V_{RRM = 1700V}
d.c.
Half-wave
3-phase
1540 A
2420 A
2050 A
.026^OC/W
.028^OC/W
.030^OC/W
d.c.
Half-wave
3-phase
870 A
1365 A
1060 A
.06^oC/W
.062^oC/W
.064^oC/W
14920 A
2205000 A²sec
1540000 A²sec
21000 A
100A/µs
300 V/ µs
30 V
0.25 V
5V
10 A
150 W
10 W
-55 to
10 to
135^OC
125^OC
125 ^OC
400 Hz
Document Page 1 of 4
Revised 05/2016
DEKRA Certification Inc.
AS9100C and ISO 9001:2008
Certificate No. 131519.01