AMS-G2M Datasheet, PDF (1/2 Pages) American Microsemiconductor – Technical Specifications

AMS-G2M
Technical Specifications
FEATURES
Glass passivated
High maximum operating temperature
Low leakage current
Excellent stability
Guaranteed avalanche energy absorption capability
MECHANICAL DATA
Case: SOD-64 sintered glass case
Terminal: Plated axial leads solderable per
MIL-STD 202E,
method 208C
Polarity: color band denotes
cathode end
Mounting position: any
Dimensions in millimeters
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
(single-phase, half-wave, 60HZ, resistive or inductive load rating at 25 C, unless otherwise stated)
SYMBOL
BYM26E
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC blocking Voltage
Reverse Breakdown Voltage
at IR = 0.1mA
Maximum Average Forward Rectified Current
and Ttp=55 C; lead length=10mm
Peak Forward Surge Current at t=10ms half
sine wave
Maximum Forward Voltage at Rated Forward
Current and 25 C
IF = 2.0A
Maximum DC Reverse Current Ta = 25 C
at rated DC blocking voltage
Ta = 150 C
Maximum Reverse Recovery Time (Note 1)
V_RRM
V_RMS
V_DC
V_(BR)R
I_FAV
I_FSM
V_F
I_R
Trr
1000
700
1000
1100min
2.3
45
2.65
10
150
75
Non Repetitive Reverse Avalanche Energy
E_R
10
Diode Capacitance at f=1MHz,VR=0V
C_d
75
Typical Thermal Resistance
(Note 2)
R_th(ja)
75
Storage and Operating Junction Temperature Tstg, Tj
-65 to +175
Note:
1. Reverse Recovery Condition IF = 0.5A, IR = 1.0A, IRR = 0.25A
2. Device mounted on an epoxy-glass printed-circuit board, 1.5mm thick; thickness of Cu-layer≥40μm
units
V
V
V
V
A
A
V
A
A
nS
mJ
pF
K/W
℃
American Microsemiconductor Inc.
133 Kings Road, Madison, NJ 07940
tel. [phone] fax. [phone]
Page 1 of 2
AS/EN/JISQ/ 9100:2009 REV C and ISO 9001:2008 Certificate No: 45325
http://www.americanmicrosemiconductor.com