AM-SJST60 Datasheet, PDF (1/2 Pages) American Microsemiconductor – Bidirectional Triode Thyristor (TRIAC)

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AM-SJST60
Bidirectional Triode Thyristor (TRIAC)
2
3
1
ABSTRACT
The AM-SJST60 TRIAC is suitable for
general purpose AC switching, and can be
used as an ON/OFF function in applications
such as static relays, heating regulation,
induction motor circuitry, light dimmers,
motor speed control, and can be used in a
diverse number of other electrical designs.
MAIN FEATURES
Parameter
ITRMS
VDRM/VRRM
VTM @80A
Value
Unit
=
60
A
>= 800
V
< 1.75
V
ABSOLUTE MAXIMUM RATINGS
Parameter
Symbol
Value
Unit
Storage temperature range
Tstg -40 to +150 °C
Operating junction temp. range
Tj
-40 to +125 °C
Nonrepetitive surge peak on-state current full cycle, Tj=25°C, f=50Hz, t=20ms ITSM
550
A
I²t Value for fusing, tp=10ms
I²t
880
A²s
Critical rate of rise of on-state current IG=2xIGT, trs=100ns, f=120Hz, Tj=125°C dI/dt
50
A/μs
Peak gate current @ tp=20μs, Tj=125°C
IGM
4
A
Peak gate power dissipation @ tp=20μs, Tj=125°C
Average gate power dissipation @ Tj=125°C
PGM
10
W
PGAV
1
W
ELECTRICAL CHARACTERISTICS
THERMAL RESISTANCE
Test Condition
VD=12V, and RL=33Ω
VD=VDRM, RL=3.3KΩ, Tj=125°C
IG=1.2IGT
IT=100mA
VD=67% VDRM gate open, Tj=125°C
Without snubber, Tj=125°C
Symbol
IGT1
IGT2, IGT3
VGT
VGD
IL1, IL3
IL2
IH
dV/dt
(dI/dt)c
Value/Range
10 to 20
20 to 45
1.2
0.2
< 60
< 120
< 60
> 500
5 to 20
Unit
mA
mA
V
V
mA
mA
mA
V/μs
A/ms
Symbol Pkg. Value
Rth(J-C) TG-C 0.8
*JUNCTION TO CASE (AC)
Unit
°C/W
Tel. [phone], Fax. [phone]
133 Kings Road,
Madison, New Jersey 07940
United States of America
© 2013 American Microsemiconductor, Inc.
Specifications are subject to change without notice.
www.americanmicrosemi.com
Document Page 1 of 2
Revised 06/2013
Aerospace Mgmt. Sys. Cert.
AS/EN/JISQ9100:2009 Rev. C
ISO9001:2008
Cert No. 45325