6MBI100FC-060 Datasheet, PDF (1/2 Pages) American Microsemiconductor – FUJI Electric IGBT Transistor Module

Advancing the Semiconductor Industry Since 1972
Dimensional Schematic
6MBI100FC-060
FUJI Electric IGBT Transistor Module
Abstract
The 6MBI100FC-060 is a discontinued
insulated-gate bipolar transistor in a
modular package by FUJI Electric, currently
in “Last Time Buy” sale through American
Microsemiconductor.
Features
 Square RBSOA
 Low Saturation Voltage
 Less Total Power Dissipation
 Improved FWD Characteristic
 Minimized Internal Stray Inductance
 Overcurrent Limiting Function
Applications
 High Power Switching
 A.C. or D.C. Motor Control
 Uninterruptible Power Supplies
Tel. [phone], Fax. [phone]
133 Kings Road,
Madison, New Jersey 07940
United States of America
© 2013 American Microsemiconductor, Inc.
Specifications are subject to change without notice.
www.americanmicrosemi.com
mm
AA
94.0
AB
18.5
AC
10.0
AE
17.0
AH
14.0
AK
4.5
AL
7.0
AM 66.0
AN
80.0
BA
86.0
BB
74.0
BC
6.0
BE
61.0
BH
6.5
BK
28.0
BL
4.5
BM
5.5
BN
20.0
BP
18.0
BR
15.0
BT
5.0
BU
10.5
CA
27.0
CB
25.5
CC
6.5
CE
2.5
CH
3.0
DS 4- Ø5.4
Document Page 1 of 2
Revised 06/2013
Aerospace Mgmt. Sys. Cert.
AS/EN/JISQ9100:2009 Rev. C
ISO9001:2008
Cert No. 45325