2N5481 Datasheet, PDF (1/1 Pages) American Microsemiconductor – NPN UHF POWER Amplifier Transistor

 
 
 
 
2N5481
NPN  UHF  Power  Amplifier  Transistor  
FEATURES  
§ Hermetically sealed ceramic-
metal stud stripline package.
IMAGE SERVES AS A REPRESENTATION ONLY
MAXIMUM  RATINGS  
Description
Collector-to-Base Voltage:
Collector-to-Emitter Voltage:
Emitter-to-Base Voltage:
Collector Current:
Power Dissipation @ 25°C Stud Temp.:
Thermal Resistance (Junction-to-stud):
Operating Junction Temperature:
Storage Temperature:
Stud Torque:
Sym.
VCBO
VCEO
VEBO
IC
θJC
TJ
TSTG
Value
55
30
3.5
200
5
35
-65 to +200
-65 to +200
7
Unit
V
V
V
mA
W
°C/W
°C
°C
IN-LBS.
 
ELECTRICAL  CHARACTERISTICS  (  @  25°C  UNLESS  OTHERWISE  SPECIFIED)  
Description
Emitter To Base Voltage
IEBO=100µA
Collector to Emitter Voltage
IC = 10mA, IB = 0
IC = 10mA, R = 10 OHMS
Collector Cutoff Current
VCE = 55V, VBE = -1.5V
DC Current Gain
VCE = 5.0V, IC = 100mA
High Frequency Current Gain
IC = 100mA, VCE = 5V, f = 500MHz
Output Capacitance
VCB = 30V, f = 1.0MHz
Power Output (Collector Eff. 25% Min.)
VCE=28V, P(IN)=300mW, f=2.0GHz
in Vendor's Test Circuit
Noise Figure
RF Power Gain
f=400MHz, POUT=-10DBM
 
Sym. Min
VEBO 3.5
VCEO
30
VCER
55
ICEX
hFE
20
hfe
3.2
Cob
1.8
P(OUT) 1.0
NF
PG
15
Max
1.0
150
2.5
5.0
Unit
V
V
mA
pF
W
dB
dB
DRAWING  (TOP/SIDE)  
 
Tel.  1-­‐973-­‐377-­‐9566,      Fax.  1-­‐973-­‐377-­‐3078  
133  Kings  Road,    
Madison,  New  Jersey    07940  
United  States  of  America  
©  2013  American  Microsemiconductor,  Inc.  
Specifications  are  subject  to  change  without  notice.  
www.americanmicrosemi.com    
Document  Page  1  of  1  
Revised  06/2013  
Aerospace  Mgmt.  Sys.  Cert.    
AS/EN/JISQ9100:2009  Rev.  C  
ISO9001:2008  
Cert  No.  45325