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2N3053A Datasheet, PDF (1/1 Pages) Seme LAB – Bipolar NPN Device in a Hermetically sealed TO39
Transistors > Bipolar > Si NPN Power HF
2N3053A
Technical Specifications
SPECIFICATIONS
Military Grade
VBR CEO
VBR CBO
IC Maximum
Absolute Max. Power Diss.
Maximum Operating Temp.
ICBO Maximum
@ VCBO Test Condition
hFE Min. Current Gain.
hFE Max. Current Gain.
@ IC Test Condition
@ VCE Test Condition
fT Min. Transition Freq.
@ IC Test Condition
@ VCE Test Condition
VCE sat Max.
@ IC Test Condition
@ IB Test Condition
Package Style
Mounting Style
American Microsemiconductor, Inc.
133 Kings Road, Madison, NJ 07940
Tel. 973-377-9566 Fax. 973-377-3078
Value
N
60
80
700
5.0
200
250
60
50
250
150
10
100
50
10
0.30
150
15
TO-5
T
Unit
---
V
V
mA
W
°C
nA
V
β
β
mA
V
MHz
mA
V
V
mA
mA
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ISO9001:2008, AS/EN/JISQ 9100 Rev. C
Certificate No. 45325
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