2N2169 Datasheet, PDF (1/1 Pages) American Microsemiconductor – PNP Germanium Transistor

Advancing the Semiconductor Industry Since 1972
2N2169
PNP Germanium Transistor
Abstract
2N2169 is a bipolar Germanium PNP
transistor used for high speed switching.
The hermetically sealed TO-9 metal can
package is highly durable and
contributes to the longevity of the
device. Through-hole mounting style.
Picture serves as a representation only
Electrical Characteristics
Value
Unit
Max ICBO
3
μA
hFE
40
min
@ IC
10
mA
VCE
0.5
V
fT Min.
tr Max.
450
MHz
18
nsec
tf Max.
18
nsec
K's
50
nsec
Cob
2.5
pF
VCE @IC=10mA
0.15
V
VBE @IC=10mA
0.36
V
Maximum Ratings
Package Style
Value Unit ^{TO-9 Metal Can}
VCES
15
V
VCEO
15
V
PD @ 25°C
60
mW
IC
100
mA
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© 2013 American Microsemiconductor, Inc.
Specifications are subject to change without notice.
www.americanmicrosemi.com
Document Page 1 of 1
Revised 06/2013
Aerospace Mgmt. Sys. Cert.
AS/EN/JISQ9100:2009 Rev. C
ISO9001:2008
Cert No. 45325